Selective growth of single-walled carbon nanotubes and fabrication of devices on their base

O. Kononenko¹, V. Matveev¹, V. Volkov¹, An. Firsov¹, A. Il'in¹, D. Matveev², Y. Kasumov¹, I. Khodos¹
IMT RAS¹ and ISSP RAS², Chernogolovka, Russia
Equipment: SEM Zeiss EVO 50

The samples were fabricated as follows. At first, a Pt film with Cr underlayer was deposited by e-beam evaporation on oxidized silicon wafer using photolithography mask to form contact pads and lanes. Then the wafer was cut up to obtain chips. 10 nm Al/1 nm Fe bilayer catalyst was selectively deposited by e-beam gun onto the chips using electron beam lithography and a lift-off technique. After that the chips with deposited bilayer catalyst were heated in a furnace in air atmosphere for 2 min in order to form Fe nanoparticles. Then the nanotubes were synthesized by single injection of acetylene CVD technique. E-beam lithography with NanoMaker system and a lift-off process were used to pattern e-beam evaporation deposited Pd-Al electrodes contacting nanotubes.

General view of a sample. 6 nanotube SQUID prototypes.

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